Please use this identifier to cite or link to this item:
https://hdl.handle.net/1822/12894| Title: | Coulomb drag and high resistivity behavior in double layer graphene |
| Author(s): | Peres, N. M. R. Santos, J. M. B. Lopes dos Castro Neto, A. H. |
| Keywords: | Graphene |
| Issue date: | Jul-2011 |
| Publisher: | IOP Publishing |
| Journal: | Epl |
| Abstract(s): | We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/o ratio for current ow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates. |
| Type: | Article |
| URI: | https://hdl.handle.net/1822/12894 |
| DOI: | 10.1209/0295-5075/95/18001 |
| ISSN: | 0295-5075 1286-4854 |
| Peer-Reviewed: | yes |
| Access: | Open access |
| Appears in Collections: | CDF - CEP - Artigos/Papers (with refereeing) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| EPL_Drag_to_Arxive.pdf | 939,11 kB | Adobe PDF | View/Open |
