Please use this identifier to cite or link to this item:
|Title:||Coulomb drag and high resistivity behavior in double layer graphene|
|Author(s):||Peres, N. M. R.|
Santos, J. M. B. Lopes dos
Castro Neto, A. H.
|Abstract(s):||We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/o ratio for current ow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates.|
|Appears in Collections:||CDF - CEP - Artigos/Papers (with refereeing)|