Please use this identifier to cite or link to this item: https://hdl.handle.net/1822/12894

TitleCoulomb drag and high resistivity behavior in double layer graphene
Author(s)Peres, N. M. R.
Santos, J. M. B. Lopes dos
Castro Neto, A. H.
KeywordsGraphene
Issue dateJul-2011
PublisherIOP Publishing
JournalEpl
Abstract(s)We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/o ratio for current ow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates.
TypeArticle
URIhttps://hdl.handle.net/1822/12894
DOI10.1209/0295-5075/95/18001
ISSN0295-5075
1286-4854
Peer-Reviewedyes
AccessOpen access
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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