Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/12894
Registo completo
Campo DC | Valor | Idioma |
---|---|---|
dc.contributor.author | Peres, N. M. R. | - |
dc.contributor.author | Santos, J. M. B. Lopes dos | - |
dc.contributor.author | Castro Neto, A. H. | - |
dc.date.accessioned | 2011-07-19T14:40:46Z | - |
dc.date.available | 2011-07-19T14:40:46Z | - |
dc.date.issued | 2011-07 | - |
dc.identifier.issn | 0295-5075 | por |
dc.identifier.issn | 1286-4854 | por |
dc.identifier.uri | https://hdl.handle.net/1822/12894 | - |
dc.description.abstract | We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/o ratio for current ow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates. | por |
dc.description.sponsorship | We acknowledge useful discussions with A. GEIM and K. NOVOSELOV. AHCN acknowledges DOE grant DE-FG02-08ER46512 and ONR grant MURI N00014-09-1-1063. | por |
dc.language.iso | eng | por |
dc.publisher | IOP Publishing | por |
dc.rights | openAccess | por |
dc.subject | Graphene | por |
dc.title | Coulomb drag and high resistivity behavior in double layer graphene | por |
dc.type | article | por |
dc.peerreviewed | yes | por |
sdum.publicationstatus | published | por |
oaire.citationStartPage | 18001 | por |
oaire.citationIssue | 1 | por |
oaire.citationTitle | EPL | por |
oaire.citationVolume | 95 | por |
dc.identifier.doi | 10.1209/0295-5075/95/18001 | - |
dc.subject.wos | Science & Technology | por |
sdum.journal | Epl | por |
Aparece nas coleções: | CDF - CEP - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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EPL_Drag_to_Arxive.pdf | 939,11 kB | Adobe PDF | Ver/Abrir |