Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/13767
Título: | Structural and photoluminescence studies of erbium implanted nanocrystalline silicon thin films |
Autor(es): | Cerqueira, M. F. Alpuim, P. Filonovich, Sergej Alves, E. Rolo, Anabela G. Andrês, G. Soares, J. Kozanecki, A. |
Palavras-chave: | Nanocrystalline silicon thin films RFCVD HWCVD Structural properties Er emission |
Data: | 2009 |
Editora: | Wiley-VCH Verlag |
Revista: | physica status solidi (a) |
Resumo(s): | Hydrogenated amorphous and nanocrystalline silicon thin films deposited by Hot Wire (HW) and Radio-Frequency Plasma-Enhanced (RF) Chemical Vapor Deposition were Er-bium-implanted. Their pre-implantation structural properties and post-implantation optical properties were studied and cor-related. After one-hour annealing at 150ºC in nitrogen atmos-phere only amorphous films showed photoluminescence (PL) activity at 1.54 μm, measured at 5 K. After further annealing at 300oC for one hour, all the samples exhibited a sharp PL peak positioned at 1.54 m, with a FWHM of ~5 nm. Amorphous films deposited by HW originated a stronger PL peak than corresponding films deposited by RF, while in na-nocrystalline films PL emission was much stronger in sam-ples deposited by RF than by HW. There was no noticeable difference in Er3+ PL activity be-tween films implanted with 1x1014 atoms/cm2 and 5x1015 at-oms/cm2 Er doses. |
Tipo: | Artigo |
URI: | https://hdl.handle.net/1822/13767 |
DOI: | 10.1002/pssa.200881785 |
ISSN: | 1862-6300 |
Versão da editora: | http://onlinelibrary.wiley.com/doi/10.1002/pssa.200881785/pdf |
Arbitragem científica: | yes |
Acesso: | Acesso aberto |
Aparece nas coleções: | CDF - CEP - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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PL-SiEr-PSSa2009.pdf | Documento principal | 599,12 kB | Adobe PDF | Ver/Abrir |