Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix

Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/14310

Título:	Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix
Autor(es):	Vieira, E. M. F. Pinto, S. R. C. Levichev, S. Rolo, Anabela G. Chahboun, A. Buljan, M. Barradas, N. P. Alves, E. Bernstorff, S. Conde, O. Gomes, M. J. M.
Palavras-chave:	Semiconductors Magnetron sputtering Si1-xGex nanocrystals Mullite GIXRD Raman scattering GISAXS Si Ge nanocrystals 1-x x
Data:	2011
Editora:	Elsevier
Revista:	Microelectronic Engineering
Resumo(s):	Si1-xGex nanocrystals (NCs), embedded in Al2O3 matrix, were fabricated on Si (100) substrates by RF magnetron sputtering technique with following annealing procedure at 800 C, in nitrogen atmosphere. The presence of Si1-xGex NCs was confirmed by grazing incidence X-ray diffraction (GIXRD), grazing incidence small angle X-ray scattering (GISAXS) and Raman spectroscopy. The influence of the growth conditions on the structural properties and composition of Si1-xGex NCs inside the alumina matrix was analyzed. Optimal conditions to grow Si1-xGex (x~0.8) NCs sized between 3 and 4 nm in Al2O3 matrix were established.
Tipo:	Artigo
URI:	https://hdl.handle.net/1822/14310
DOI:	10.1016/j.mee.2010.10.016
ISSN:	0167-9317
Versão da editora:	http://linkinghub.elsevier.com/retrieve/pii/S016793171000376X
Arbitragem científica:	yes
Acesso:	Acesso restrito UMinho
Aparece nas coleções:	CDF - FCT - Artigos/Papers (with refereeing) CDF - FMNC - Artigos/Papers (with refereeing)