Annealing effect on the photoluminescence of ge-doped silica films

Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/16959

Título:	Annealing effect on the photoluminescence of ge-doped silica films
Autor(es):	Rolo, Anabela G. Chahboun, A. Conde, O. Vasilevskiy, Mikhail Gomes, M. J. M.
Palavras-chave:	Germanium Nanocrystals Photoluminescence Defects
Data:	Jan-2008
Editora:	Elsevier
Revista:	Physica E
Resumo(s):	SiO2 thin films doped with Ge nanocrystals (NCs) were grown using the RF-sputtering technique. X-ray diffraction studies revealed a diamond structure for Ge NCs. The presence of Ge NCs in the grown films was also confirmed by Raman spectroscopy. Photoluminescence spectroscopy of the samples revealed an emission band at 2.07 eV, which is tentatively attributed to defects located at the Ge-matrix interface. This was found to be quite sensitive to variations of local matrix composition, induced by the annealing process.
Tipo:	Artigo
Descrição:	The authors are grateful to Dr. L. Rebouta for the RBS studies and to Dr. G. Hungerford for his careful reading of the manuscript.
URI:	https://hdl.handle.net/1822/16959
DOI:	10.1016/j.physe.2007.09.144
ISSN:	1386-9477
Versão da editora:	http://www.sciencedirect.com/science/article/pii/S1386947707005668
Arbitragem científica:	yes
Acesso:	Acesso restrito UMinho
Aparece nas coleções:	CDF - CEP - Artigos/Papers (with refereeing) CDF - FMNC - Artigos/Papers (with refereeing)