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TitleCharge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix
Author(s)Vieira, E. M. F.
Levichev, S.
Dias, Carlos J.
Igreja, Rui
Buljan, M.
Bernstorff, S.
Conde, Olinda
Chahboun, A.
Rolo, Anabela G.
Gomes, M. J. M.
KeywordsCharge storage
RF sputtering
Memory effect
MOS nanostructure
Issue date30-Jul-2013
JournalThe European Physical Journal B
Abstract(s)The charge storage behavior of nanostructures based on Si1−xGex (0 ≤ x ≤ 1) nanocrystals (NCs) in an Al2O3 matrix was investigated. The structures have been grown by RF magnetron sputtering and subsequently annealed at temperatures ranging from 700 ºC to 1000 ºC for 30 min in nitrogen ambient. The stoichiometry of the SiGe NCs and the alumina crystalline structure were found to be significantly dependent on the RF power and the annealing temperature. The sizes of the SiGe NCs and their distribution were investigated by grazing incidence small angle X-ray scattering (GISAXS). The capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed to investigate the charge trapping characteristics of the memory structures. The C-V hysteresis width depends on variations in the crystalline structure resulting from different annealing temperatures. It is also shown that charge injection is governed by the Fowler-Nordheim tunnel mechanism for higher electric fields.
DescriptionThe authors would like to thank Professor David Barber (University of Essex) for his helpful discussions and critical reading of this manuscript, and Engineer José Santos for technical support at Thin Film Laboratory.
Publisher version
AccessRestricted access (UMinho)
Appears in Collections:CDF - CEP - Artigos/Papers (with refereeing)

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