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https://hdl.handle.net/1822/27466
Título: | Influence of RF-sputtering power on formation of vertically stacked Si1−xGex nanocrystals between ultra-thin amorphous Al2O3 layers: structural and photoluminescence properties |
Autor(es): | Vieira, E. M. F. Martín-Sánchez, J. Roldan, M. A. Varela, M. Buljan, Maja Bernstorff, Sigrid Barradas, Nuno P. Franco, Nuno Correia, M. R. Rolo, Anabela G. Pennycook, S. J. Molina, S. I. Alves, Eduardo Chahboun, A. Gomes, M. J. M. |
Palavras-chave: | SiGe Nanocrystals Raman RBS GISAXS Multi-layer films HRTEM XRR Magnetron sputtering deposition HAADF-STEM EELS Photoluminescence (PL) |
Data: | 4-Set-2013 |
Editora: | IOP Publishing |
Revista: | Journal of Physics D: Applied Physics |
Citação: | Vieira, E. M. F., Martín-Sánchez, J., Roldan, M. A., Varela, M., Buljan, M., Bernstorff, S., … Gomes, M. J. M. (2013, September 4). Influence of RF-sputtering power on formation of vertically stacked Si1−xGexnanocrystals between ultra-thin amorphous Al2O3layers: structural and photoluminescence properties. Journal of Physics D: Applied Physics. IOP Publishing. http://doi.org/10.1088/0022-3727/46/38/385301 |
Resumo(s): | In this work, we investigate the structural and photoluminescence (PL) properties of (SiGe+Al2O3)/Al2O3 multi-layer films with layer thicknesses in the range of a few nanometres. The films were prepared by magnetron sputtering deposition at room temperature followed by an annealing process to promote the formation of small SiGe nanocrystals (NCs) (∼3 to 5 nm) embedded between ultra-thin (∼6 nm thickness) Al2O3 layers. Our results show that the structural and compositional properties of the films can be tuned by changing the RF-power. It is found that nearly spherical and well confined isolated SiGe NCs (∼5 nm) are obtained for an RF-power value of 80 W. The PL properties of the films were studied and optical emission in the blue visible wavelength region was observed. |
Tipo: | Artigo |
Descrição: | The authors would like to thank Professor David J Barber (University of Essex) for his helpful discussions and critical reading of this manuscript, and Engineer José Santos for technical support at Thin Film Laboratory. |
URI: | https://hdl.handle.net/1822/27466 |
DOI: | 10.1088/0022-3727/46/38/385301 |
ISSN: | 0022-3727 |
e-ISSN: | 1361-6463 |
Versão da editora: | https://iopscience.iop.org/article/10.1088/0022-3727/46/38/385301 |
Arbitragem científica: | yes |
Acesso: | Acesso restrito UMinho |
Aparece nas coleções: | CDF - CEP - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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Influence of RF-sputtering power on formation of vertically stacked Si1−xGex.pdf Acesso restrito! | Documento principal | 2,03 MB | Adobe PDF | Ver/Abrir |