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https://hdl.handle.net/1822/5474
Título: | Competition between ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O-3 thin films deposited by sol-gel |
Autor(es): | Boerasu, Iulian Pintilie, Lucian Pereira, A. Mário Vasilevskiy, Mikhail Gomes, M. J. M. |
Palavras-chave: | PZT Schottky diode Capacitance Optical absorption |
Data: | 2003 |
Editora: | American Institute of Physics |
Revista: | Journal of applied physics |
Citação: | Boerasu, I., Pintilie, L., Pereira, M., Vasilevskiy, M. I., & Gomes, M. J. M. (2003, March 28). Competition between ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O3 thin films deposited by sol–gel. Journal of Applied Physics. AIP Publishing. http://doi.org/10.1063/1.1562009 |
Resumo(s): | Asymmetric metal–ferroelectric–metal (MFM) structures were manufactured by sol–gel deposition of a lead zirconate-titanate (PZT with Zr/Ti ratio 65/35) film on Pt-coated Si, with a Au top electrode. The average remnant polarization of 9 µC/cm2 and the coercive field of 39 kV/cm were obtained from the hysteresis loop measurements. A detailed analysis of the polarization–electric field (P–E), capacitance–voltage (C–V), and current–voltage (I–V) measurement results allowed us to estimate the near-electrode space-charge region thickness (roughly half of the film thickness at zero voltage), net doping concentration (around 1018 cm–3), built-in potential (in the 0.4–0.8 V range, depending on the injecting electrode), and dynamic dielectric constant (5.2). The current logarithm–voltage dependence for the field-enhanced Schottky emission obeys a "1/4" law. The spectral distribution of the short circuit current measured under continuous light illumination in the 290–800 nm range exhibits a cutoff wavelength at 370 nm and a maximum sensitivity at about 340 nm. The estimated band-gap energy of the PZT material is 3.35 eV. The MFM structure is discussed in terms of two back-to-back Schottky diodes with a ferroelectric material in between. It is concluded that the semiconductor properties of the films are not negligible and, in certain conditions, are dominating over the ferroelectric ones |
Tipo: | Artigo |
URI: | https://hdl.handle.net/1822/5474 |
DOI: | 10.1063/1.1562009 |
ISSN: | 0021-8979 |
Arbitragem científica: | yes |
Acesso: | Acesso aberto |
Aparece nas coleções: | CDF - CEP - Artigos/Papers (with refereeing) CDF - FMNC - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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JAP-2003.pdf | Documento principal | 110,69 kB | Adobe PDF | Ver/Abrir |