Please use this identifier to cite or link to this item: https://hdl.handle.net/1822/75004

TitleAll-oxide p−n junction thermoelectric generator based on SnOx and ZnO thin films
Author(s)Vieira, E. M. F
Silva, José Pedro Basto
Veltruská, Kateřina
Istrate, Cosmin M.
Lenzi, Veniero
Trifiletti, Vanira
Lorenzi, Bruno
Matolín, Vladimír
Ghica, Corneliu
Marques, L.
Fenwick, Oliver
Gonçalves, L. M.
KeywordsHermoelectricity
Energy generation
All-oxide device
p−n junction
Density functional theory
TEGs
thermoelectricity
Issue date28-Jul-2021
PublisherAmerican Chemical Society
JournalACS Applied Materials & Interfaces
Abstract(s)Achieving thermoelectric devices with high performance based on low-cost and nontoxic materials is extremely challenging. Moreover, as we move toward an Internet-of-Things society, a miniaturized local power source such as a thermoelectric generator (TEG) is desired to power increasing numbers of wireless sensors. Therefore, in this work, an all-oxide p-n junction TEG composed of low-cost, abundant, and nontoxic materials, such as n-type ZnO and p-type SnOx thin films, deposited on borosilicate glass substrate is proposed. A type II heterojunction between SnOx and ZnO films was predicted by density functional theory (DFT) calculations and confirmed experimentally by X-ray photoelectron spectroscopy (XPS). Moreover, scanning transmission electron microscopy (STEM) combined with energy-dispersive X-ray spectroscopy (EDS) show a sharp interface between the SnOx and ZnO layers, confirming the high quality of the p-n junction even after annealing at 523 K. ZnO and SnOx thin films exhibit Seebeck coefficients (α) of ∼121 and ∼258 μV/K, respectively, at 298 K, resulting in power factors (PF) of 180 μW/m K2 (for ZnO) and 37 μW/m K2 (for SnOx). Moreover, the thermal conductivities of ZnO and SnOx films are 8.7 and 1.24 W/m K, respectively, at 298 K, with no significant changes until 575 K. The four pairs all-oxide TEG generated a maximum power output (Pout) of 1.8 nW (≈126 μW/cm2) at a temperature difference of 160 K. The output voltage (Vout) and output current (Iout) at the maximum power output of the TEG are 124 mV and 0.0146 μA, respectively. This work paves the way for achieving a high-performance TEG device based on oxide thin films.
TypeArticle
URIhttps://hdl.handle.net/1822/75004
DOI10.1021/acsami.1c09748
ISSN1944-8244
e-ISSN1944-8252
Publisher versionhttps://pubs.acs.org/doi/abs/10.1021/acsami.1c09748
Peer-Reviewedyes
AccessRestricted access (UMinho)
Appears in Collections:CDF - FMNC - Artigos/Papers (with refereeing)

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