Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/75004
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Campo DC | Valor | Idioma |
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dc.contributor.author | Vieira, E. M. F | por |
dc.contributor.author | Silva, José Pedro Basto | por |
dc.contributor.author | Veltruská, Kateřina | por |
dc.contributor.author | Istrate, Cosmin M. | por |
dc.contributor.author | Lenzi, Veniero | por |
dc.contributor.author | Trifiletti, Vanira | por |
dc.contributor.author | Lorenzi, Bruno | por |
dc.contributor.author | Matolín, Vladimír | por |
dc.contributor.author | Ghica, Corneliu | por |
dc.contributor.author | Marques, L. | por |
dc.contributor.author | Fenwick, Oliver | - |
dc.contributor.author | Gonçalves, L. M. | - |
dc.date.accessioned | 2021-12-20T10:49:39Z | - |
dc.date.issued | 2021-07-28 | - |
dc.identifier.issn | 1944-8244 | por |
dc.identifier.uri | https://hdl.handle.net/1822/75004 | - |
dc.description.abstract | Achieving thermoelectric devices with high performance based on low-cost and nontoxic materials is extremely challenging. Moreover, as we move toward an Internet-of-Things society, a miniaturized local power source such as a thermoelectric generator (TEG) is desired to power increasing numbers of wireless sensors. Therefore, in this work, an all-oxide p-n junction TEG composed of low-cost, abundant, and nontoxic materials, such as n-type ZnO and p-type SnOx thin films, deposited on borosilicate glass substrate is proposed. A type II heterojunction between SnOx and ZnO films was predicted by density functional theory (DFT) calculations and confirmed experimentally by X-ray photoelectron spectroscopy (XPS). Moreover, scanning transmission electron microscopy (STEM) combined with energy-dispersive X-ray spectroscopy (EDS) show a sharp interface between the SnOx and ZnO layers, confirming the high quality of the p-n junction even after annealing at 523 K. ZnO and SnOx thin films exhibit Seebeck coefficients (α) of ∼121 and ∼258 μV/K, respectively, at 298 K, resulting in power factors (PF) of 180 μW/m K2 (for ZnO) and 37 μW/m K2 (for SnOx). Moreover, the thermal conductivities of ZnO and SnOx films are 8.7 and 1.24 W/m K, respectively, at 298 K, with no significant changes until 575 K. The four pairs all-oxide TEG generated a maximum power output (Pout) of 1.8 nW (≈126 μW/cm2) at a temperature difference of 160 K. The output voltage (Vout) and output current (Iout) at the maximum power output of the TEG are 124 mV and 0.0146 μA, respectively. This work paves the way for achieving a high-performance TEG device based on oxide thin films. | por |
dc.description.sponsorship | This work was supported by the FCT national funds, under the national support to R&D units grant, through (i) the reference project UIDB/04436/2020 and UIDP/04436/2020, (ii) the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding Contracts UIDB/ 04650/2020; V.T. is funded by an MSCA Individual Fellowship (HYPERTHERM 798271); O.F. is supported by a Royal Society University Research Fellowship (UF140372). Part of this work was supported by the COST Action CA18203, Optimizing Design for Inspection (ODIN), and the project PTDC/EEI-TEL/29670/2017 (POCI-01-0145- FEDER-029670), co-financed by the European Regional Development Fund (ERDF), through COMPETE 2020. The authors acknowledge the CERIC-ERIC Consortium for access to experimental facilities and financial support under proposal 20192056. The authors thank engineers José Santos and Nuno Gomes for technical support at the Thin Film Laboratories. | por |
dc.language.iso | eng | por |
dc.publisher | American Chemical Society | por |
dc.relation | UIDB/04436/2020 | por |
dc.relation | UIDP/04436/2020 | por |
dc.relation | UIDB/04650/2020 | por |
dc.relation | PTDC/EEI-TEL/29670/2017 | por |
dc.relation | POCI-01-0145-FEDER-029670 | por |
dc.rights | restrictedAccess | por |
dc.subject | Hermoelectricity | por |
dc.subject | Energy generation | por |
dc.subject | All-oxide device | por |
dc.subject | p−n junction | por |
dc.subject | Density functional theory | por |
dc.subject | TEGs | por |
dc.subject | thermoelectricity | por |
dc.title | All-oxide p−n junction thermoelectric generator based on SnOx and ZnO thin films | por |
dc.type | article | por |
dc.peerreviewed | yes | por |
dc.relation.publisherversion | https://pubs.acs.org/doi/abs/10.1021/acsami.1c09748 | por |
oaire.citationStartPage | 35187 | por |
oaire.citationEndPage | 35196 | por |
oaire.citationIssue | 29 | por |
oaire.citationVolume | 13 | por |
dc.identifier.eissn | 1944-8252 | por |
dc.identifier.doi | 10.1021/acsami.1c09748 | por |
dc.date.embargo | 10000-01-01 | - |
dc.identifier.pmid | 34254775 | por |
dc.subject.wos | Science & Technology | por |
sdum.journal | ACS Applied Materials & Interfaces | por |
Aparece nas coleções: | CDF - FMNC - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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vieira2021.pdf Acesso restrito! | 752,71 kB | Adobe PDF | Ver/Abrir |