Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/17184

TítuloTemperature dependence of photoluminescence from CdSe nanocrystals embedded in silica matrix
Autor(es)Chahboun, A.
Levichev, S.
Rolo, Anabela G.
Conde, O.
Gomes, M. J. M.
Palavras-chaveCdSe
Nanocrystals
Photoluminescence
Temperature dependence
Thermal expansion
Data21-Jul-2009
EditoraElsevier 1
RevistaJournal of Luminescence
Resumo(s)In this work, CdSe nanocrystals (NCs) embedded in SiO(2) matrix were grown by radio frequency (RF)sputtering technique. X-ray technique was used to characterise the structural properties of the system. The NC's size was estimated to be around 4 +/- 1 nm in diameter. The temperature dependence of the photoluminescence from the CdSe/SiO(2) System showed carriers thermal exchange between the NCs and deep defects in the matrix. The evolution of the excitonic energy emission with temperature is about 10 meV in the temperature range 15-295 K. This weak shift was explained by thermal mismatch between the matrix and the NCs.
TipoArtigo
URIhttps://hdl.handle.net/1822/17184
DOI10.1016/j.jlumin.2009.06.007
ISSN0022-2313
Versão da editorahttp://www.sciencedirect.com/
Arbitragem científicayes
AcessoAcesso restrito UMinho
Aparece nas coleções:CDF - FMNC - Artigos/Papers (with refereeing)

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