Please use this identifier to cite or link to this item: https://hdl.handle.net/1822/5161

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dc.contributor.authorTorres, V. J. B.-
dc.contributor.authorCoutinho, J.-
dc.contributor.authorCarvalho, A.-
dc.contributor.authorBarroso, M.-
dc.contributor.authorAlmeida, Luís de-
dc.contributor.authorPinto, H.-
dc.contributor.authorRibeiro, R. M.-
dc.date.accessioned2006-06-26T12:51:01Z-
dc.date.available2006-06-26T12:51:01Z-
dc.date.issued2005-
dc.identifier.citationCONFERÊNCIA NACIONAL DA SOCIEDADE PORTUGUESA DE FÍSICA, 2005 – “Física 2005” [S.l. :s.n., 2005].eng
dc.identifier.urihttps://hdl.handle.net/1822/5161-
dc.description.abstractUnderstanding the most elemental defects in semiconductors is a fundamental step to grasp the countless solid-state reactions that may occur during crystal growth, device processing and operation stages. The higher carrier mobilitity in SiGe alloys and germanium, when compared with silicon, and the necessity to a higher K dielectric than SiO2 makes these semiconductors the most contendors to a new generation of electronic devices. Our aim is to model self and impurity point defects in SiGe alloys and germanium, and compare with their equivalent complexes in silicon. We use density functional theory and pseudopotentials to determine the structural, electronic and vibrational properties. The calculations are performed in a 32 CPU PC cluster, in Physics Department of Aveiro University.eng
dc.description.sponsorshipFundação para a Ciência e a Tecnologia (FCT).eng
dc.description.sponsorshipINTAS.eng
dc.language.isoengeng
dc.rightsopenAccesseng
dc.subjectSiliconeng
dc.subjectGermaniumeng
dc.subjectModellingeng
dc.subjectDefectseng
dc.subjectSiGeeng
dc.subjectAlloyseng
dc.titleAb initio modeling of defects in silicon, germanium and SiGe alloyseng
dc.typeconferencePostereng
Appears in Collections:CDF - FMNC - Outros Documentos/Other Documents (without refereeing)

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