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https://hdl.handle.net/1822/5554
Título: | Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor |
Autor(es): | Alpuim, P. Ribeiro, M. Filonovich, Sergej |
Palavras-chave: | Nanocrystalline silicon Hot-wire CVD Flexible electronics Thin-film solar cell |
Data: | 2006 |
Editora: | Trans Tech Publications |
Revista: | Materials science forum |
Citação: | Alpuim, P., Ribeiro, M., & Filonovich, S. (2006, May 15). Optimization of Deposition Parameters for Thin Silicon Films on Flexible Substrates in a Hot-Wire Chemical Vapor Deposition Reactor. Materials Science Forum. Trans Tech Publications, Ltd. http://doi.org/10.4028/www.scientific.net/msf.514-516.475 |
Resumo(s): | This paper studies the deposition of thin silicon films from silane on plastic substrates in a recently build hot-wire chemical vapor deposition reactor. Hydrogen dilution of silane was used to induce amorphous-to-nanocrystalline phase transition. Thin-film deposition rate, r(d), is roughly proportional to silane concentration during deposition but the proportionality factor depends on filament temperature, T-fil. At T-fil similar to 2500 degrees C (1900 degrees C), r(d) increases from 2.1 angstrom/s (1.2 angstrom/s) at 97% H-2 dilution to 14.5 angstrom/s (10.7 angstrom/s) for films deposited from pure silane. At T-fil similar to 2500 degrees C, films deposited under 80% H-2 dilution were amorphous, under 90% H-2 dilution the crystalline fraction was X-C = 49.4% and under 95% H-2 dilution, X-C = 52.8%. At T-fil similar to 1900 degrees C, samples were amorphous up to similar to 95% H-2 dilution where a crystalline fraction of 22.3% was measured. Films with amorphous structure have sigma(d) similar to 10(-10)-10(-9) Omega(-1.)cm(-1) while those with a measured crystalline fraction have sigma(d)similar to 10(-7)-10(-5) Omega(-1)cm(-1), depending on the amount of crystalline fraction and grain size. Films with lower sigma(d) have optical band gap in the range similar to 1.85-1.9 eV, typical of hydrogenated amorphous silicon, while those with higher sigma(d) have larger optical band gap (similar to 2 eV), typical of hydrogenated nanocrystalline silicon. Adhesion of the films to the plastic substrate was good, as they survived bending to small radius of curvature (< 1 mm) without peeling. Structural, optical and transport properties were similar on films deposited both on PEN and on glass under the same deposition conditions. |
Tipo: | Artigo em ata de conferência |
URI: | https://hdl.handle.net/1822/5554 |
ISBN: | 9780878494026 |
DOI: | 10.4028/www.scientific.net/msf.514-516.475 |
ISSN: | 0255-5476 |
Versão da editora: | http://doi.org/10.4028/www.scientific.net/msf.514-516.475 |
Arbitragem científica: | yes |
Acesso: | Acesso aberto |
Aparece nas coleções: | CDF - CEP - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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TO2+P6_reviewed.pdf | Documento principal | 142,8 kB | Adobe PDF | Ver/Abrir |