Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/75003
Registo completo
Campo DC | Valor | Idioma |
---|---|---|
dc.contributor.author | Silva, José Pedro Basto | por |
dc.contributor.author | Sekhar, K. C. | por |
dc.contributor.author | Negrea, R. F. | por |
dc.contributor.author | Ghica, C. | por |
dc.contributor.author | Dastan, D. | por |
dc.contributor.author | Gomes, M. J. M. | por |
dc.date.accessioned | 2021-12-20T10:29:31Z | - |
dc.date.issued | 2022 | - |
dc.identifier.issn | 0272-8842 | por |
dc.identifier.uri | https://hdl.handle.net/1822/75003 | - |
dc.description.abstract | In this work, the ferroelectric characteristics of ZrO2 thin films grown on ITO-coated glass have been investigated. The ferroelectric nature of the ZrO2 films has been studied by polarization-electric field (P-E) hysteresis loops and found to be optimum for the films processed by rapid thermal annealing at 600 ◦C. The increase in the annealing temperature improves the ferroelectric properties through the increase of the in-plane strain that causes the formation of the ferroelectric orthorhombic phase. The formation of the orthorhombic phase was confirmed through high-resolution transmission electron microscopy. The effect of the electric field on the po larization switching kinetics of ZrO2 films has been investigated revealing that the switching kinetics follows the nucleation limited switching (NLS) model. The activation fields estimated from the peak values of the polarization currents (im) and the time (tm) at which im occurs are in good agreement with the values obtained from the switching characteristic time of the NLS model. This work paves the way towards the integration of (pseudo)- binary oxide thin films on cheap substrates like glass for the next-generation of non-volatile memories. | por |
dc.description.sponsorship | This work was supported by: (i) the Portuguese Foundation for Sci ence and Technology (FCT) in the framework of the Strategic Funding Contracts UIDB/04650/2020 and (ii) DST-SERB, Govt. of India through Grant Nr. ECR/2017/00006. RFN and CG acknowledge funding through the contract POC 332/390008/29.12.2020-SMIS 109522. The authors acknowledge the CERIC-ERIC Consortium for access to experimental facilities and financial support under proposal 20192055. The authors would also like to thank José Santos for technical support in the Thin Film Laboratory at CF-UM-UP. | por |
dc.language.iso | eng | por |
dc.publisher | Elsevier 1 | por |
dc.relation | info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDB%2F04650%2F2020/PT | por |
dc.rights | restrictedAccess | por |
dc.subject | Ferroelectric | por |
dc.subject | Orthorhombic ZrO2 films | por |
dc.subject | Glass substrate | por |
dc.subject | Ion-beam sputtering deposition technique | por |
dc.subject | Orthorhombic ZrO films 2 | por |
dc.title | Ferroelectric properties of ZrO2 films deposited on ITO-coated glass | por |
dc.type | article | por |
dc.peerreviewed | yes | por |
dc.relation.publisherversion | https://www.sciencedirect.com/science/article/pii/S0272884221035707 | por |
oaire.citationStartPage | 6131 | por |
oaire.citationEndPage | 6137 | por |
oaire.citationIssue | 5 | por |
oaire.citationVolume | 48 | por |
dc.identifier.eissn | 1873-3956 | por |
dc.identifier.doi | 10.1016/j.ceramint.2021.11.152 | por |
dc.date.embargo | 10000-01-01 | - |
dc.subject.wos | Science & Technology | por |
sdum.journal | Ceramics International | por |
Aparece nas coleções: | CDF - FMNC - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
---|---|---|---|---|
1-s2.0-S0272884221035707-main (1).pdf Acesso restrito! | 4,84 MB | Adobe PDF | Ver/Abrir |