Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/11846
Registo completo
Campo DC | Valor | Idioma |
---|---|---|
dc.contributor.author | Marins, Emílio Sérgio | - |
dc.contributor.author | Guduru, Virendra | - |
dc.contributor.author | Ribeiro, Miguel | - |
dc.contributor.author | Cerqueira, M. F. | - |
dc.contributor.author | Bouattour, Ali | - |
dc.contributor.author | Alpuim, P. | - |
dc.date.accessioned | 2011-03-09T09:22:51Z | - |
dc.date.available | 2011-03-09T09:22:51Z | - |
dc.date.issued | 2011-01-21 | - |
dc.identifier.citation | "Physica Status Solidi C". ISSN 1610-1642. 8:3 (Jan. 2011) 846-849. | por |
dc.identifier.issn | 1610-1642 | por |
dc.identifier.uri | https://hdl.handle.net/1822/11846 | - |
dc.description.abstract | Nanocrystalline silicon (nc-Si:H) is commonly used in the bottom cell of tandem solar cells. With an indirect bandgap, nc-Si:H requires thicker (∼1 µm) films for efficient light harvesting than amorphous Si (a-Si:H) does. Therefore, thin-film high deposition rates are crucial for further cost reduction of highly efficient a–Si:H based photovoltaic technology. Plastic substrates allow for further cost reduction by enabling roll-to-roll inline deposition. In this work, high nc-Si:H deposition rates on plastic were achieved at low substrate temperature (150 °C) by standard Radio-frequency (13.56 MHz) Plasma Enhanced Chemical Vapor Deposition. Focus was on the influence of deposition pressure, inter-electrode distance (1.2 cm) and high power coupled to the plasma, on the hydrogen-to-silane dilution ratios (HD) necessary to achieve the amorphous-to-nanocrystalline phase transition and on the resulting film deposition rate. For each pressure and rf-power, there is a value of HD for which the films start to exhibit a certain amount of crystalline fraction. For constant rf-power, this value increases with pressure. Within the parameter range studied the deposition rate was highest (0.38 nm/s) for nc-Si:H films deposited at 6 Torr, 700 mW/cm2 using HD of 98.5 %. Decreasing the pressure to 3 Torr (1.5 Torr) and rf-power to 350 mW/cm2 using HD – 98.5 % deposition rate is 0.12 nm/s (0.076 nm/s). Raman crystalline fraction of these films is 72, 62 and 53 % for the 6, 3 and 1.5 Torr films, respectively. | por |
dc.description.sponsorship | Fundação para a Ciência e a Tecnologia (FCT) | por |
dc.description.sponsorship | DREBM/PICS_CNRS/2010 | por |
dc.language.iso | eng | por |
dc.publisher | Wiley-VCH Verlag | por |
dc.rights | openAccess | por |
dc.subject | Nanocrystalline silicon | por |
dc.subject | Thin films | por |
dc.subject | High-rate deposition | por |
dc.subject | Solar cells | por |
dc.title | High-rate deposition of nano-crystalline silicon thin films on plastics | por |
dc.type | conferencePaper | por |
dc.peerreviewed | no | por |
dc.relation.publisherversion | http://onlinelibrary.wiley.com | por |
oaire.citationStartPage | 846 | por |
oaire.citationEndPage | 849 | por |
oaire.citationIssue | 3 | por |
oaire.citationTitle | Physica Status Solidi C | por |
oaire.citationVolume | 8 | por |
dc.identifier.doi | 10.1002/pssc.201000288 | por |
dc.subject.wos | Science & Technology | por |
sdum.journal | Physica Status Solidi C | por |
sdum.conferencePublication | PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3 | por |
Aparece nas coleções: | CDF - CEP - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
---|---|---|---|---|
Marins_High-rate deposition_silicon films.pdf | pre-print | 459,54 kB | Adobe PDF | Ver/Abrir |