Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/13751Registo completo
| Campo DC | Valor | Idioma |
|---|---|---|
| dc.contributor.author | Cerqueira, M. F. | - |
| dc.contributor.author | Semikina, T. V. | - |
| dc.contributor.author | Baidus, N. V. | - |
| dc.contributor.author | Alves, E. | - |
| dc.date.accessioned | 2011-09-30T14:52:44Z | - |
| dc.date.available | 2011-09-30T14:52:44Z | - |
| dc.date.issued | 2010 | - |
| dc.identifier.issn | 0268-1900 | por |
| dc.identifier.uri | https://hdl.handle.net/1822/13751 | - |
| dc.description.abstract | The properties of mixed-phase (nanocrystalline/amorphous) silicon layers produced by reactive RF-sputtering are described. The chemical composition and nanostructure [i.e. nanocrystal (NC) size and volume fraction] of the films were studied by Rutherford backscattering spectroscopy (RBS) and micro-Raman spectroscopy, respectively. Samples with different fractions of the nanocrystalline phase and NC mean size were produced by changing the deposition parameters, without post-growth annealing. The electrical conductivity of the films, measured as function of temperature, is discussed in relation to their nanostructure | por |
| dc.description.sponsorship | FCT Project POCTI/CTM/39395/2001 | por |
| dc.language.iso | eng | por |
| dc.publisher | Inderscience | por |
| dc.relation | info:eu-repo/grantAgreement/FCT/POCI/39395/PT | - |
| dc.rights | openAccess | por |
| dc.subject | Amorphous silicon | por |
| dc.subject | Nanocrystal | por |
| dc.subject | Raman spectroscopy | por |
| dc.subject | Electrical properties | por |
| dc.title | Effect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon films | por |
| dc.type | article | por |
| dc.peerreviewed | yes | por |
| dc.relation.publisherversion | http://www.inderscience.com/search/index.php?action=record&rec_id=34271 | por |
| sdum.publicationstatus | published | por |
| oaire.citationStartPage | 195 | por |
| oaire.citationEndPage | 204 | por |
| oaire.citationIssue | 1-2 | por |
| oaire.citationTitle | International Journal of Materials and Product Technology | por |
| oaire.citationVolume | 39 | por |
| dc.identifier.doi | 10.1504/IJMPT.2010.034271 | por |
| dc.subject.wos | Science & Technology | por |
| sdum.journal | International Journal of Materials and Product Technology | por |
| Aparece nas coleções: | CDF - CEP - Artigos/Papers (with refereeing) | |
Ficheiros deste registo:
| Ficheiro | Descrição | Tamanho | Formato | |
|---|---|---|---|---|
| HP-Si-IJMPI2010.pdf | Documento principal | 223,73 kB | Adobe PDF | Ver/Abrir |
