Utilize este identificador para referenciar este registo: https://hdl.handle.net/1822/2151

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dc.contributor.authorRocha, J. G.-
dc.contributor.authorCorreia, J. H.-
dc.date.accessioned2005-06-13T11:10:04Z-
dc.date.available2005-06-13T11:10:04Z-
dc.date.issued2001-
dc.identifier.citation"Sensors and Actuators A : Physical". ISSN 0924-4247. 92 (2001). p. 203-207.eng
dc.identifier.issn0924-4247-
dc.identifier.urihttps://hdl.handle.net/1822/2151-
dc.description.abstractThis paper proposes a X-rays detector based on an array of scintillator crystals, CsI:Tl, encapsulated in a well that is etched into a silicon substrate by deep reactive ion etching. The X-ray energy is first converted to visible light which is detected by a photodetector in the well bottom. DRIE techniques are used to achieve perfect vertical side-walls 515um deep, 100um pixel square size and to maximize the fill factor. The inner walls of the well that are coated with aluminum for improving the number of photons which arrives to the detector and for reducing cross-talk between adjacent wells. Simulations and modeling show an improvement of approximately 26% in the detection efficiency using an aluminum layer.eng
dc.language.isoengeng
dc.publisherElsevier 1eng
dc.rightsopenAccesseng
dc.subjectScintillatoreng
dc.subjectDigital radiologyeng
dc.subjectX-rayeng
dc.subjectDRIEeng
dc.subjectMicromachiningeng
dc.titleA high performance scintillator-silicon-well x-ray microdetector based on DRIE techniqueseng
dc.typearticleeng
dc.peerreviewedyeseng
oaire.citationStartPage203por
oaire.citationEndPage207por
oaire.citationIssue1-3por
oaire.citationVolume92por
dc.identifier.doi10.1016/S0924-4247(01)00564-7por
dc.subject.wosScience & Technologypor
sdum.journalSensors and Actuators A: Physicalpor
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