Quality factor of thin-film Fabry-Perot resonators: dependence on interface roughness

Abstract

Thin-film Fabry-Perot (F-P) optical resonators are studied for application as wavelength-selecting elements in on-chip spectrometers. The interface roughness between the different resonator layers (Al /PECVD SiO2 / Ag) is identified to be the primary source of light scattering and energy losses. It is demonstrated that conventional IC fabrication yields layers with RMS interface roughness easily exceeding 10 nm. When applied to the visible spectral range, such a roughness causes significant degradation of the F-P filter quality factor. Moreover, the scattered light contributes to transmittance outside the narrow resonance band to which the F-P filter is tuned and overall device performance is decreased.