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https://hdl.handle.net/1822/74998
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Campo DC | Valor | Idioma |
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dc.contributor.author | Silva, José Pedro Basto | por |
dc.contributor.author | Sekhar, Koppole C. | por |
dc.contributor.author | Pan, Hao | por |
dc.contributor.author | MacManus-Driscoll, Judith L. | por |
dc.contributor.author | Pereira, Mário | por |
dc.date.accessioned | 2021-12-17T16:35:46Z | - |
dc.date.issued | 2021 | - |
dc.identifier.issn | 2380-8195 | por |
dc.identifier.uri | https://hdl.handle.net/1822/74998 | - |
dc.description.abstract | Among currently available energy storage (ES) devices, dielectric capacitors are optimal systems owing to their having the highest power density, high operating voltages, and a long lifetime. Standard high performance ferroelectric-based ES devices are formed of complex composition perovskites and require precision, high-temperature thin film fabrication. The discovery of ferroelectricity in doped HfO2 in 2011 at the nanoscale was potentially game-changing for many modern technologies, such as field effect transistors, non-volatile memory, and ferroelectric tunnel junctions. This is because HfO2 is a well-established material in the semiconductor industry, where it is used as a gate dielectric. On the other hand, (pseudo)binary HfO2 and ZrO2-based materials have received much less attention for ES capacitors, even though antiferro-electric HfO2 and ZrO2-based thin films show strong promise. This Focus Review summarizes the current status of conventional polymer and perovskite ferroic-based ES. It then discusses recent developments in, and proposes new directions for, antiferroelectric and ferroelectric group IV oxides, namely HfO2 and ZrO2-based thin films | por |
dc.description.sponsorship | This work was supported by the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding Contract UIDB/04650/2020 and by DST-SERB, Govt. of India through Grant No. ECR/2017/00006. Part of this work was supported by the COST Action CA18203 − Optimizing Design for Inspection (ODIN). J.L.M.-D. thanks the Royal Academy of Engineering, grant CIET 1819 24. H.P. thanks the China Scholarship Council (No. 201806210299). | por |
dc.language.iso | eng | por |
dc.publisher | American Chemical Society (ACS) | por |
dc.relation | UIDB/04650/2020 | por |
dc.rights | restrictedAccess | por |
dc.title | Advances in dielectric thin films for energy storage applications, revealing the promise of group IV binary oxides | por |
dc.type | article | por |
dc.peerreviewed | yes | por |
dc.relation.publisherversion | https://pubs.acs.org/doi/10.1021/acsenergylett.1c00313 | por |
oaire.citationStartPage | 2208 | por |
oaire.citationEndPage | 2217 | por |
oaire.citationIssue | 6 | por |
oaire.citationVolume | 6 | por |
dc.identifier.doi | 10.1021/acsenergylett.1c00313 | por |
dc.date.embargo | 10000-01-01 | - |
dc.subject.wos | Science & Technology | por |
sdum.journal | ACS Energy Letters | por |
Aparece nas coleções: | CDF - FMNC - Artigos/Papers (with refereeing) |
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acsenergylett.1c00313.pdf Acesso restrito! | 1,77 MB | Adobe PDF | Ver/Abrir |