Coulomb drag and high resistivity behavior in double layer graphene

dc.contributor.author	Peres, N. M. R.
dc.contributor.author	Santos, J. M. B. Lopes dos
dc.contributor.author	Castro Neto, A. H.
dc.date.accessioned	2011-07-19T14:40:46Z
dc.date.available	2011-07-19T14:40:46Z
dc.date.issued	2011-07
dc.description.abstract	We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/o ratio for current ow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates.	por
dc.description.sponsorship	We acknowledge useful discussions with A. GEIM and K. NOVOSELOV. AHCN acknowledges DOE grant DE-FG02-08ER46512 and ONR grant MURI N00014-09-1-1063.	por
dc.identifier.doi	10.1209/0295-5075/95/18001
dc.identifier.issn	0295-5075	por
dc.identifier.issn	1286-4854	por
dc.identifier.uri	https://hdl.handle.net/1822/12894
dc.language.iso	eng	por
dc.peerreviewed	yes	por
dc.publisher	IOP Publishing	por
dc.rights	openAccess	por
dc.subject	Graphene	por
dc.subject.wos	Science & Technology	por
dc.title	Coulomb drag and high resistivity behavior in double layer graphene	por
dc.type	article	por
dspace.entity.type	Publication	en
oaire.citationIssue	1	por
oaire.citationStartPage	18001	por
oaire.citationTitle	EPL	por
oaire.citationVolume	95	por
sdum.journal	Epl	por
sdum.publicationstatus	published	por

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