Dielectric function of nanocrystalline silicon with few nanometers (<3 nm) grain size
| dc.contributor.author | Losurdo, M. | |
| dc.contributor.author | Giangregorio, M. M. | |
| dc.contributor.author | Capezzuto, Pio | |
| dc.contributor.author | Bruno, G. | |
| dc.contributor.author | Cerqueira, M. F. | |
| dc.contributor.author | Alves, E. | |
| dc.contributor.author | Stepikhova, M. | |
| dc.date.accessioned | 2011-10-25T14:30:18Z | |
| dc.date.available | 2011-10-25T14:30:18Z | |
| dc.date.issued | 2003 | |
| dc.description.abstract | The dielectric function of nanocrystalline silicon (nc-Si) with crystallite size in the range of 1 to 3 nm has been determined by spectroscopic ellipsometry in the range of 1.5 to 5.5 eV. ATauc–Lorentz parameterization is used to model the nc-Si optical properties. The nc-Si dielectric function can be used to analyze nondestructively nc-Si thin films where nanocrystallites cannot be detected by x-ray diffraction and Raman spectroscopy. | por |
| dc.identifier.doi | 10.1063/1.1569052 | por |
| dc.identifier.issn | 0003-6951 | por |
| dc.identifier.uri | https://hdl.handle.net/1822/14015 | |
| dc.language.iso | eng | por |
| dc.peerreviewed | yes | por |
| dc.publisher | AIP Publishing | por |
| dc.relation.publisherversion | http://apl.aip.org/resource/1/applab/v82/i18/p2993_s1 | por |
| dc.rights | openAccess | por |
| dc.subject | Dielectric function | por |
| dc.subject | Nanocrystalline silicon | por |
| dc.subject | Ellipsometry | por |
| dc.subject.wos | Science & Technology | por |
| dc.title | Dielectric function of nanocrystalline silicon with few nanometers (<3 nm) grain size | por |
| dc.type | article | por |
| dspace.entity.type | Publication | en |
| oaire.citationEndPage | 2995 | por |
| oaire.citationIssue | 18 | por |
| oaire.citationStartPage | 2993 | por |
| oaire.citationTitle | Appl. Phys. Lett. | por |
| oaire.citationVolume | 82 | por |
| sdum.journal | Applied Physics Letters | por |
| sdum.publicationstatus | published | por |
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