Processability and electrical characteristics of glass substrates for RF wafer-level chip-scale packages
| dc.contributor.author | Polyakov, A. | |
| dc.contributor.author | Mendes, P. M. | |
| dc.contributor.author | Sinaga, S. M. | |
| dc.contributor.author | Bartek, M. | |
| dc.contributor.author | Rejaei, B. | |
| dc.contributor.author | Correia, J. H. | |
| dc.contributor.author | Burghartz, J. N. | |
| dc.date.accessioned | 2005-06-02T11:05:28Z | |
| dc.date.available | 2005-06-02T11:05:28Z | |
| dc.date.issued | 2003-05 | |
| dc.description.abstract | Various types of glass substrates have been compared with respect to their suitability as a low-loss substrate in wafer-level chip-scale packaging for RF applications. Processability has been evaluated by fabrication of shallow and deep recesses using wet etching in HF (/H3PO4) solutions. Electrical characteristics (dielectric constant and attenuation) have been extracted from measurements on coplanar wave guides (CPWs) up to 10 GHz. Results show that Coming Pyrex #7740 glass provides optical quality of wet-etched deep recesses, but exhibit about 2 times higher electrical attenuation than Hoya SD-2. Pyrex #7740 and SD-2 are thermally matched to silicon and due to some alkali content, they are suitable for anodic bonding. The relatively high content of AL2O3 (~20%) in SD-2 is favorable for its electrical properties, but makes wet etching of deep recesses more difficult. The non-alkaline AF45, with CTE almost 2 times of Si (CTEAF45=4.5x10-6 k-1), is suitable for adhesive bonding and is difficult to pattern using wet etching. Its electrical attenuation is close to that of SD-2. The measured dielectric constants (at 6 GHz) for SD-2, Pyrex #7740 and AF45 are 4.7,5.9 and 6.1, respectively. | |
| dc.description.sponsorship | Fundação para a Ciência e a Tecnologia (FCT), European Comission, Philips Research. | por |
| dc.distribution | international | eng |
| dc.identifier.citation | ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, 53, New Orleans, 2003 - "Proceedings". New Orleans : IEEE, 2003. ISBN 0-7803-7430-4. p. 875-880. | eng |
| dc.identifier.isbn | 0-7803-7430-4 | |
| dc.identifier.issn | 0569-5503 | por |
| dc.identifier.uri | https://hdl.handle.net/1822/1950 | |
| dc.language.iso | eng | eng |
| dc.peerreviewed | yes | eng |
| dc.publisher | IEEE | eng |
| dc.rights | openAccess | eng |
| dc.subject | Wafer level packaging | eng |
| dc.subject | Wafer bonding | eng |
| dc.subject | Glass wafer processing | eng |
| dc.title | Processability and electrical characteristics of glass substrates for RF wafer-level chip-scale packages | eng |
| dc.type | conferencePaper | eng |
| dspace.entity.type | Publication | en |
| oaire.citationEndPage | 880 | por |
| oaire.citationStartPage | 875 | por |
| sdum.journal | Proceedings - Electronic Components and Technology Conference | por |
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