Utilize este identificador para referenciar este registo:
https://hdl.handle.net/1822/13751| Título: | Effect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon films |
| Autor(es): | Cerqueira, M. F. Semikina, T. V. Baidus, N. V. Alves, E. |
| Palavras-chave: | Amorphous silicon Nanocrystal Raman spectroscopy Electrical properties |
| Data: | 2010 |
| Editora: | Inderscience |
| Revista: | International Journal of Materials and Product Technology |
| Resumo(s): | The properties of mixed-phase (nanocrystalline/amorphous) silicon layers produced by reactive RF-sputtering are described. The chemical composition and nanostructure [i.e. nanocrystal (NC) size and volume fraction] of the films were studied by Rutherford backscattering spectroscopy (RBS) and micro-Raman spectroscopy, respectively. Samples with different fractions of the nanocrystalline phase and NC mean size were produced by changing the deposition parameters, without post-growth annealing. The electrical conductivity of the films, measured as function of temperature, is discussed in relation to their nanostructure |
| Tipo: | Artigo |
| URI: | https://hdl.handle.net/1822/13751 |
| DOI: | 10.1504/IJMPT.2010.034271 |
| ISSN: | 0268-1900 |
| Versão da editora: | http://www.inderscience.com/search/index.php?action=record&rec_id=34271 |
| Arbitragem científica: | yes |
| Acesso: | Acesso aberto |
| Aparece nas coleções: | CDF - CEP - Artigos/Papers (with refereeing) |
Ficheiros deste registo:
| Ficheiro | Descrição | Tamanho | Formato | |
|---|---|---|---|---|
| HP-Si-IJMPI2010.pdf | Documento principal | 223,73 kB | Adobe PDF | Ver/Abrir |
