Semiconductor layer thickness impact on optical and resistive switching behavior of pulsed laser deposited BaTiO3/ZnO heterostructures

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Semiconductor layer thickness impact on optical and resistive switching behavior of pulsed laser deposited BaTiO3/ZnO heterostructures

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Sekhar, K. C. Silva, J. P. B.

Kamakshi, Koppole Pereira, Mário

Gomes, M. J. M.

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Semiconductor layer thickness impact on optical and resistive switching behavior of pulsed laser deposited BaTiO3-ZnO heterostructures.pdf (1023.27 KB)

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CDF - FMNC - Artigos | Articles (with refereeing)

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